As described above we can prepare

In summary, a novel method has been presented for the preparation of Ge-rich poly-SiGe thin film on glass at temperatures as low as 300 °C. A a-Si Voreloxin layer is employed to help the nucleation of Ge on a glass substrate. The growth mechanism of this method has been investigated and discussed. The excellent crystal quality of poly-SiGe thin film on glass has been confirmed by XRD, Raman spectra and TEM measurements. The results open up the possibility of developing SiGe-based electronic and optical devices fabricated on inexpensive substrates. Moreover, fabrication of high quality poly-SiGe thin films on a-Si thin film enables the application in the multi-junction solar cell as the bottom cell.
Figure optionsDownload full-size imageDownload high-quality image (212 K)Download as PowerPoint slide
Keywords
Titanium alloys; Sintering; Grain refinement; Phase transformation; Microstructure
prs.rt(\"abs_end\");
Specifically to PM Ti, the key to achieve mechanical properties that can match that of wrought Ti while maintaining the low-cost advantage is to find a way to produce wrought-like microstructures without using pressure-assisted sintering processes or relying on TMP, which is energy-intensive and incompatible with the NNS nature of PM. This objective can be achieved only by using low-cost powder, blended elemental alloying, near-net-shape compaction, and pressure-less sintering processes that can deliver the desired microstructures in the as-sintered or heat-treated state. Achieving fluid feeders goal would be a breakthrough that could transform the Ti industry.